MMBF4416 — N-Channe
l RF Amplifiers
? 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MMBF4416 Rev. B2 1
April 2009
MMBF4416
N-Channel RF Amplifiers
? This device is designed for RF amplifiers.
? Sourced from process 50.
Absolute Maximum Ratings
TA=25°C unless otherwise noted
Electrical Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Value Units
VDG
Drain-Gate Voltage 30 V
VGS
Gate-Source Voltage -30 V
IGF
Forward Gate Current 10 mA
TJ, TSTG
Junction and Storage Temperature Range -55 to +150
°C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V(BR)GSS
Gate-Source Breakdown Voltage VDS
= 0, I
G
= 1
μA-30V
IGSS
Gate Reverse Current VGS
= -20V, V
DS
= 0
VGS
= -20V, V
DS
= 0, T
A
= 150
°C
-1
-200
nA
nA
VGS(off) Gate Source Cut-off Voltage VDS
= 15V, I
D
= 1nA -2.5 -6 V
VGS
Gate Source Voltage VDS
= 15V, I
D
= 0.5mA -1 -5.5 V
On Characteristics
IDSS
Zero-Gate Voltage Drain Current VGS
= 15V, V
GS
= 0 5 15 mA
VGS(f) Gate-Source Forward Voltage VDS
= 0, I
G
= 1mA 1 V
Small Signal Characteristics
lYfsl Forward Transfer Admittance VDS
= 15V, V
GS
= 0, f = 1KHz 4500 7500
μmhos
lyosl Output Admittance VDS
= 15V, V
GS
= 0, f = 1KHz 50
μmhos
Ciss
Input Capacitance VDS
= 15V, V
GS
= 0, f = 1MHz 4
PF
Crss
Reverse Transfer Capacitance VDS
= 15V, V
GS
= 0, f = 1MHz 0.9
PF
Coss
Output Capacitance VDS
= 15V, V
GS
= 0, f = 1MHz 2
PF
Functional Characteristics
NF Noise Figure VDS
= 15V, I
D
= 5mA, R
g
= 100
Ω, f = 100MHz 2 dB
Gps
Common Source Power Gain VDS
= 15V, I
D
= 5mA, R
g
= 100
Ω, f = 100MHz 18 dB
SOT-23D
Mark: 6A
S
G
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